The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 1990
Filed:
Nov. 23, 1988
Applicant:
Inventors:
Kiyoshi Ooiwa, Yokosuka, JP;
Masahiko Doki, Sagamihara, JP;
Assignee:
Fuji Electric Co., Ltd., Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01H / ;
U.S. Cl.
CPC ...
204298 ; 156345 ; 156643 ; 118723 ; 20419232 ;
Abstract
In a typical plasma processing apparatus, microwaves are generated into a processing chamber which contains a gas and a substrate. Magnetic fields transmitted into the processing chamber cause plasma to be produced when microwaves are generated. Typically an RF bias voltage is applied to the substrate during the process. By optimizing the RF bias voltage which the pulses of microwaves the apparatus produces a higher quality thin film, or etching process, without damaging the substrate surface.