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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4890245 B1

PDFFull Text
Date of Patent:
Dec. 26, 1989

Filed:

Sep. 17, 1987

Method for measuring temperature of semiconductor substrate and

Applicant:
Inventors:

Masahiko Yomoto, Kawasaki, JP;

Makoto Uehara, Tokyo, JP;

Hajime Ichikawa, Yokohama, JP;

Shigeru Kato, Hoya, JP;

Assignee:

Nikon Corporation, Tokyo, JP;

Attorney:

Shapiro and Shapiro

Primary Examiner:

Parshotam Lall

Assistant Examiner:

Ellis B Ramirez

Int. Cl.
CPC ...
G06F / ; G01S / ;
U.S. Cl.
CPC ...
364557 ; 2504922 ; 356 51 ; 374121 ;
Abstract

An apparatus and a method for detecting the temperature of a substrate, and for controlling the radiation-annealing of the substrate, for example, measures the intensity of infrared light from the substrate when the substrate is irradiated by measuring infrared light and also when the substrate is not irradiated by the infrared light. The temperature is calculated from the transmissivity and emissivity of the substrate, which are calculated from the intensity measurements.

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Yomoto, Masahiko. (1989). Method for measuring temperature of semiconductor substrate and (U.S. Patent No. 4890245). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4890245

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