The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 1989
Filed:
Mar. 29, 1989
Subramanian Ramesh, Ossining, NY (US);
North American Philips Corporation, New York, NY (US);
Abstract
A defect free monocrystalline layer of silicon on an insulator is produced by forming a thin layer of silicon dioxide on a monocrystalline silicon substrate, forming a thin layer of polycrystalline or amorphous silicon on the silicon dioxide layer and focussing two beams from lamps on the thin silicon layer to form a line image providing a melt zone surrounded by two narrow heated zones having temperatures lower than the melt zone and having a temperature differential of from 2.degree.-10.degree. C./mm decreasing form the melt zone while heating the substrate to a temperature below that of the zones heated by the lamps and scanning the structure.