The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 1989
Filed:
Dec. 23, 1988
Applicant:
Inventors:
Lydia L Rivaud, Rochester, NY (US);
Paul Roselle, Rochester, NY (US);
David Losee, Fairport, NY (US);
Assignee:
Eastman Kodak Company, Rochester, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 43 ; 437 53 ; 437191 ; 357 24 ;
Abstract
A process is described to eliminate the re-entrant profile in double polysilicon gate structures commonly used in VLSI microelectronic devices such as CCDs is eliminated by depositing a conformal insulating layer (5) on the poly-oxide layer (4), plasma etching to form spacer (6), oxidizing gate electrode (3) and substrate (10 to form oxide layer (7), and forming overlapping second gate electrode (8).