The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 1989
Filed:
Feb. 16, 1988
Applicant:
Inventors:
Yuzaburo Ban, Osaka, JP;
Masaya Manno, Kadoma, JP;
Minoru Kubo, Katano, JP;
Mototsugu Morisaki, Osaka, JP;
Mototsugu Ogura, Takaichi, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 81 ; 148D / ; 148D / ; 148D / ; 148D / ; 156613 ; 427531 ; 437 82 ; 437110 ; 437112 ; 437133 ; 437173 ; 437936 ; 437942 ; 437963 ;
Abstract
Disclosed is a vapor phase growth method of compound semiconductor in which source gases are introduced into an epitaxial growth reactor at fixed feed rates, the substrate surface is irradiated with light, and the light irradiation is turned on and off, or the intensity of light irradiation is increased or decreased, so that an epitaxial layer structure changes in the composition, and the carrier concentration and conductivity type abruptly or continuously change in the growth film in the direction of the thickness.