The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 1989
Filed:
Feb. 20, 1987
Hiroshi Mochizuki, Hyogo, JP;
Reiji Tamaki, Hyogo, JP;
Junichi Arima, Hyogo, JP;
Masaaki Ikegami, Hyogo, JP;
Eisuke Tanaka, Hyogo, JP;
Kenji Saito, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
An improved interconnection structure and method for forming the interconnection in a semiconductor device having multilayered interconnection structure in which a contact hole for electrically connecting a first layer interconnection to a predetermined region of a semiconductor substrate and a through hole for electrically connecting a second layer interconnection to the first layer interconnection are formed in the regions overlapping with each other in planer layout. In the interconnection structure of the present invention, hillocks effective to compensate for the contact hole step are formed in the first layer interconnection only in the region of the contact hole of the first layer interconnection. In the method for forming the interconnection according to the present invention, a first layer interconnection is formed and a chemical conversion process is selectively performed to form a film which is more rigid than the first layer interconnection film on a predetermined region of the first layer interconnection film, and then a heat process is performed to generate hillocks only at the region of the contact hole of the first layer interconnection film. The second layer interconnection film is formed thereafter.