The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 1989

Filed:

Apr. 22, 1988
Applicant:
Inventors:

Steven R Brueck, Albuquerque, NM (US);

Christian F Schaus, Albuquerque, NM (US);

Marek A Osinski, Albuquerque, NM (US);

John G McInerney, Cedar Crest, NM (US);

M Yasin Raja, Albuquerque, NM (US);

Thomas M Brennan, Albuquerque, NM (US);

Burrell E Hammons, Tijeras, NM (US);

Assignee:

University of New Mexico, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 45 ; 330-43 ; 372 46 ; 372 50 ;
Abstract

A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.


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