The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 1989

Filed:

Jan. 29, 1988
Applicant:
Inventors:

Hiroshi Kitaguchi, Ibaraki, JP;

Shigeru Izumi, Tokyo, JP;

Satoshi Suzuki, Mito, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T / ; H01L / ;
U.S. Cl.
CPC ...
25037014 ; 357 29 ;
Abstract

A structure of semiconductor radiation detector element having a p-n junction comprises a substrate layer including a radiation absorbing layer having a silicon equivalent thickness not smaller than 140 .mu.m and located adjacent to a depletion layer formed at the p-n junction. With the simplified structure, both the detection sensitivity and the energy compensating performance are enhanced significantly.


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