The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 1989
Filed:
Oct. 29, 1986
Nobuhiro Endo, Tokyo, JP;
Tsuneo Hamaguchi, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A method of manufacturing a semiconductor device, has the steps of forming an element on a semiconductor substrate, adhering an element formation surface of the semiconductor substrate to another substrate through an insulating adhesive layer, removing the semiconductor substrate till the element formation layer is exposed, forming an insulating film on the element formation layer, removing the insulating film at a portion where contact holes are to be formed to expose the element formation layer or till the underlying element formation layer is exposed to expose electrode wirings, and forming wiring patterns connected thereto. A bipolar transistor manufactured by this method is also disclosed.