The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 1989
Filed:
Oct. 16, 1987
Roy S Bass, Jr, Underhill, VT (US);
Arup Bhattacharyya, Essex Junction, VT (US);
Gary D Grise, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A non-volatile storage cell comprising a field effect transistor having source, gate, and drain electrodes. The gate electrode includes a gate stack having a dielectric layer, a charge storage structure comprising a layer of silicon-rich silicon nitride having sufficient excess silicon to provide appreciable charge storage enhancement, without providing appreciable charge conductance enhancement, as compared to stoichiometric silicon nitride, and a charge injection means. A control electrode is disposed on the gate stack for effecting charge transfer to and from the silicon-rich silicon nitride layer through the charge injection means. An array of these cells is formed by disposing the FETs within independently biased substrate portions. Thus the cells can be overwritten without an intervening erasure cycle.