The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 1989

Filed:

Apr. 01, 1985
Applicant:
Inventors:

J B Price, Scottsdale, AZ (US);

Edwin E Reed, Pflugerville, TX (US);

James L Rutledge, Tempe, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K / ;
U.S. Cl.
CPC ...
21912136 ; 21912140 ; 21912143 ; 156646 ; 156345 ; 2041921 ;
Abstract

Apparatus for the nitridiation of a silicon-bearing substrate is disclosed. The apparatus includes a double walled reaction vessel having first and second concentric walls bounding a reaction volume. Temperature of the reaction volume is controlled by resistance heaters located outside the outermost of the two concentric tubes. Plasma electrodes are positioned about the reaction volume and between the two concentric tubes. The ambient between the two tubes is controlled to protect the electrodes from oxidation at the high temperatures to which they are exposed. An rf generator is coupled to the plasma electrodes and is controllable independently from the resistance heaters.


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