The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 1989

Filed:

Sep. 21, 1984
Applicant:
Inventors:

Yoshihisa Tawada, Kobe, JP;

Takeo Okamoto, Kobe, JP;

Kazunori Tsuge, Kobe, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 39 ; 437170 ; 437172 ; 437225 ;
Abstract

An improved process for preparing a semiconductor layer by means of high frequency glow discharge generated between a ground electrode and a RF electrode, the improvement which comprises controlling a DC potential difference between the electrodes at a voltage of not more than 10 V. According to the process, the semiconductor layer formed on the RF electrode side is satisfactory in electrical and electronical properties, and can be practically used.


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