The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 1989
Filed:
Dec. 16, 1988
Applicant:
Inventors:
Morris Apschel, Binghamton, NY (US);
Frank D Egitto, Binghamton, NY (US);
Ronald S Horwath, Endwell, NY (US);
Gad Koren, Yorktown Heights, NY (US);
Assignee:
IBM Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; C03C / ; C03C / ; B29C / ;
U.S. Cl.
CPC ...
156626 ; 156643 ; 156646 ; 1566591 ; 156668 ; 20419233 ; 20419236 ;
Abstract
A method of etching in an O.sub.2 microwave plasma is provided which has a predetermined selectivity between a composite of two materials such as a photoresist and a polyimide is provided. The etch rate of each of the materials is measured at various temperatures and pressures, and this composite is then etched at a selected temperature and pressure which will provide the desired degree of selectivity.