The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 1989
Filed:
Oct. 21, 1987
Applicant:
Inventor:
Bor-Yeu Tsaur, Bedford, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357 15 ; 357 61 ; 136255 ; 427178 ;
Abstract
A method and resultant device is described for fabricating iridium silicide Schottky IR detectors in which a thin intermediate film of platinum is formed between the conventional iridium outer layer over a p-type silicon substrate with or without an n-type guard ring. After thermal treatment, an iridium platinum silicide region is formed in the silicon substrate. The unreated iridium/platinum outside the device region is removed using a dry-etching process.