The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 1989

Filed:

Jul. 27, 1988
Applicant:
Inventors:

Keiji Kataoka, Kawagoe, JP;

Toshiei Kurosaki, Kodaira, JP;

Seiji Yonezawa, Hachiouji, JP;

Soichi Katagiri, Hachiouji, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N / ; G01B / ;
U.S. Cl.
CPC ...
250548 ; 356401 ;
Abstract

An optical projection printing apparatus which can irradiate a mask with light from a first light source to focus the mask pattern on a resist of a semiconductor wafer in a highly accurate alignment by a first optical system including a projection lens. A wafer mark formed on the wafer to have a grating pattern shape is arranged to have its grating pitch direction located in the sagittal plane of the first optical system. The wafer mark is irradiated with the light coming from a second light source having a wavelength different from that of the first light source. Of the reflected light from the wafer mark, only the .+-. 1st order diffraction light is extracted by a filter and partially superposed on the mask in a transversely misaligned state so that the reflected light from the wafer mark may be focused by a second optical system. The aforementioned filter is disposed in the Fourier plane of the second optical system.


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