The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 1989
Filed:
Nov. 14, 1988
Bridgette A Bergami, Gilbert, AZ (US);
Phillip H Williams, Mesa, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
Dielectric filled isolation walls for semiconductor devices and integrated circuits of improved characteristics and ease of manufacture are formed by etching trenches in a semiconductor substrate and refilling the trenches with multiple layers of silicon oxy-nitride. Alternative oxygen rich and nitrogen rich oxy-nitride layers are used. For the narrowest trenches two layers suffice. Where trenches of different widths are present the wider trenches receive multiple layer pairs. A cap layer of oxy-nitride is added to insure filling of any trench intersections. The oxy-nitride desirably has a composition Si.sub.x O.sub.y N.sub.z where x, y, and z are in the range of 0.25-0.4, 0.27-0.6, and 0.0-0.35, respectively, for the oxygen rich material and where x, y, and z are in the range 0.35-0.43m 0.0-0.35, and 0.28-0.6, respectively, for the nitrogen rich material, expressed in atomic fraction and x+y+z=1. Both compositions of oxy-nitride are formed in the same LPCVD reactor by changing the conditions during layer deposition.