The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1989
Filed:
Nov. 23, 1988
Shigetoshi Sugawa, Atsugi, JP;
Nobuyoshi Tanaka, Tokyo, JP;
Toshiji Suzuki, Machida, JP;
Tadahiro Ohmi, Sendai, JP;
Tadanori Harada, Atsugi, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A photoelectric transducer device controls a potential of a control electrode region of a semiconductor transistor through a capacitor to perform a storage operation for storing carriers generated upon light excitation of the control electrode region, a read operation for reading a signal from a main electrode region of the semiconductor transistor, the signal being controlled by a storage voltage generated by storage of the carriers, and a refresh operation for electrically neutralizing the carriers stored in the control electrode region. A semiconductor reigon having the same conductivity type as that of the main electrode region and having an impurity concentration lower than that of the main electrode region is formed in the control electrode region independently of the main electrode region. A photoelectric transducer device including a semiconductor region. Two main electrodes and a control electrode are formed between the main electrodes. A capacitor is provided for controlling a potential of the control electrode in a floating state. The photoelectric transducer device is adapted to control the potential of the control electrode in the floating state through the capacitor to store carriers generated by electromagnetic waves incident on the semiconductor region. Control means is provided for controlling the potential of the control electrode through the capacitor to electrically neutralize the carriers and means for injecting carriers into the control electrode immediately prior to electrical neutralization of the carriers by the control means is provided. '