The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 1989
Filed:
Jun. 29, 1987
Applicant:
Inventor:
James C Mitchener, Mountain View, CA (US);
Assignee:
Focus Semiconductor Systems, Inc., Sunnyvale, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437238 ; 148D / ; 4272553 ; 423337 ; 437240 ;
Abstract
A method for low temperature chemical vapor deposition of an SiO.sub.2 based film on a semiconductor structure using selected alkoxysilanes, in particular tetramethoxysilane, trimethoxysilane and triethoxysilane which decompose pyrolytically at lower temperatures than TEOS (tetraethoxysilanes). Ozone is introduced into the reaction chamber to increase deposition rates, lower reaction temperatures and provide a better quality SiO.sub.2 film by generating a more complete oxidation. Ozone is also employed as a reactant for doping SiO.sub.2 based films with oxides of phosphorus and boron.