The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 1989
Filed:
Mar. 09, 1987
Applicant:
Inventors:
Stanford R Ovshinsky, Bloomfield Hills, MI (US);
Arun Madan, Birmingham, MI (US);
Assignee:
Energy Conversion Devices, Inc., Troy, MI (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D / ; C23C / ;
U.S. Cl.
CPC ...
437233 ; 427 39 ; 4272551 ; 4272552 ;
Abstract
A method producing a solid semiconductor film characterized by a low density of defect states in the energy gap thereof by the glow discharge deposition of a precursor gaseous mixture which includes a gas chosen from the group consisting essentially of hydrogen, fluorine, or combinations thereof and a compound chosen from the group consisting essentially of SiH.sub.3 F, SiH.sub.2 F.sub.2, SiHF.sub.3, SiHCl.sub.3, SiH.sub.2 Cl.sub.2, SiH.sub.3 Cl, SiCl.sub.3 F, SiCl.sub.2 F.sub.2, SiClF.sub.3, or combinations thereof.