logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4839302 B1

PDFFull Text
Date of Patent:
Jun. 13, 1989

Filed:

Oct. 13, 1987

Method for fabricating bipolar semiconductor device

Applicant:
Inventors:

Shuichi Kameyama, Itami, JP;

Tadao Komeda, Ikoma, JP;

Kazuhiro Kobushi, Osaka, JP;

Hiroyuki Sakai, Neyagawa, JP;

Assignee:

Matsushita Electric Industrial Co., Ltd., Osaka, JP;

Attorney:

Wenderoth, Lind & Ponack

Primary Examiner:

Brian E Hearn

Assistant Examiner:

M Wilczewski

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 31 ; 437 33 ; 437162 ; 357 59 ; 357 34 ; 148D / ; 148D / ;
Abstract

In a method for fabricating a favorable bipolar semiconductor device in which the extrinsic base and emitter diffusion holes are formed in self-alignment, an optimum structure between the extrinsic base and instrinsic base is realized. By controlling the concentration of the impurities in the extrinsic base, the base contact and emitter region can be finely formed in self-alignment, and occurence of damage or contamination in the intrinsic base region is inhibited.

Find Patent Forward Citations

Kameyama, Shuichi. (1989). Method for fabricating bipolar semiconductor device (U.S. Patent No. 4839302). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4839302

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…