The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 1989
Filed:
Jul. 16, 1987
Applicant:
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; C23F / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156656 ; 1566591 ; 20419235 ; 252 791 ;
Abstract
A process wherein a thin film metal (e.g. tungsten) is anisotropically etched under plasma bombardment conditions by using a feed gas mixture which includes a fluorine source (such as SF.sub.6) plus a fluorosilane (e.g. SiF.sub.4), plus a bromine source (such as HBr), plus a weak oxygen source such as carbon monoxide. This chemistry provides anisotropic high rate fluoro-etching with good selectivity to photoresist.