The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 1989
Filed:
Aug. 13, 1986
Applicant:
Inventors:
Makoto Morioka, Nishitama, JP;
Tomoyoshi Mishima, Shiki, JP;
Kenji Hiruma, Koganei, JP;
Yoshifumi Katayama, Tokorozawa, JP;
Yasuhiro Shiraki, Hino, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357-4 ; 357 16 ; 357 63 ;
Abstract
An epitaxial crystal grown layer structure which permits, on an In-doped GaAs substrate, which will be industrially used in large quantities, the growth of an epitaxial layer having the same good quality as the epitaxial layer grown on an undoped GaAs substrate.