The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 1989

Filed:

Feb. 19, 1987
Applicant:
Inventors:

Akihiko Satou, Maebashi, JP;

Tadao Kusaka, Takasaki, JP;

Shigeo Tomiyama, Fujioka, JP;

Kouzi Aoki, Maebashi, JP;

Ichiro Gyobu, Ibaragi, JP;

Kimio Muramatsu, Takasaki, JP;

Hiroaki Sakamoto, Takasaki, JP;

Shinjiroo Ueda, Abiko, JP;

Masahiro Mase, Tochigi, JP;

Takashi Nagaoka, Ibaragi, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D / ; H01C / ;
U.S. Cl.
CPC ...
437 81 ; 148D / ; 148D / ; 148D / ; 156610 ; 156612 ; 437 85 ; 437105 ; 437228 ; 437949 ;
Abstract

This invention concerns a production method and a processing apparatus for semiconductor devices, as well as an evacuating apparatus used for the processing apparatus. According to this invention, since the evacuation system of pressure-reduction processing apparatus for conducting various wafer processings during production steps of semi-conductor devices is constituted only with oil-free vacuum pump, deleterious oil contaminations or carbonation products of oils produced from oils upon heating are not present in the pressure-reducing processing chamber as compared with conventional pressure-reducing processing apparatus using a vacuum oil pump as an evacuation pump and the production method of semiconductor devices using such apparatus. Accordingly, highly clean evacuated condition can be attained and, in addition, semiconductor devices at high reliability and with no degradation in the electric characteristics can be obtained by using the pressure-reducing processing apparatus having such a highly clean processing chamber.


Find Patent Forward Citations

Loading…