The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 1989
Filed:
Nov. 23, 1987
Applicant:
Inventors:
George K Celler, New Providence, NJ (US);
Lee E Trimble, Hillsborough, NJ (US);
Assignee:
American Telephone and Telegraph Company, AT&T Bell Laboratories, Murry Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 37 ; 437 62 ; 437 63 ; 437164 ;
Abstract
In dielectrically isolated devices a buried conducting layer adjacent to the dielectric layer is produced by a drift effect. In particular, if arsenic antimony and/or phosphorus is present in the silicon dioxide layer, it is caused to drift from this layer and enter the adjacent isolated silicon region while maintaining a relatively narrow spatial configuration. Thus, a discrete buried highly conductive layer is formed. This configuration is particularly useful for transistor configurations such as utilized in switching applications.