The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 1989
Filed:
Oct. 27, 1987
Imad Mahawili, Sunnyvale, CA (US);
Focus Semiconductor Systems, Inc., Sunnyvale, CA (US);
Abstract
A CVD reactor has a unique geometry to control the thickness of a film formed on the surface of a substrate. The reactor is approximately cylindrical in shape. The base of the reactor is inclined at an angle of approximately 3.degree.-5.degree. from the vertical and has a central platform with a recessed well. The substrate is placed in the well so that the surface of the substrate on which the film is deposited does not protrude above the platform surface. The reactant gases are mixed in a region adjacent the cylindrical wall of the reactor and flow radially inward across the wafer surface. The thickness of the deposited film is controlled by contouring a plate positioned opposite the wafer surface so that the distance between the wafer surface and the plate, and hence the deposition rate, is controlled.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile