The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 1989

Filed:

Apr. 27, 1987
Applicant:
Inventors:

Mordehai Heiblum, Yorktown Heights, NY (US);

Christina M Knoedler, Peekskill, NY (US);

David C Thomas, Ithaca, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 34 ; 357 16 ; 357 12 ; 357-4 ;
Abstract

A vertical ballistic transistor is described. Base metallic contacts of reliable thickness are deposited on a carrier depletable layer and diffuse into the base. A depletion region forms in the depletable layer. The depletion region electrically isolates the base contact from the emitter. The thickness of the depletable layer prevents the generation of usual depletion regions in the base that tend to cut off base current.


Find Patent Forward Citations

Loading…