The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 1989

Filed:

Apr. 10, 1987
Applicant:
Inventors:

Robert R Johnson, Franklin, MI (US);

Stanford R Ovshinsky, Bloomfield Hills, MI (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 52 ; 437170 ; 437173 ;
Abstract

A method of making an electronic matrix array including the steps of: providing at least one layer of discrete portions of a phase changeable material having a substantially non-conductive state and a comparatively highly conductive state, said discrete portions being in one of the states; providing a first set of electrically conductive address lines on one side of said layer of discrete portions of phase changeable material and disposing said discrete portions of phase changeable material between said first and a second set of electrically conductive address lines; the second set of address lines disposed on the opposite side of said layer of discrete portions of the phase changeable material; the first and second sets of address lines crossing at an angle so as to form a plurality of cross-over points with said discrete portions; said phase changeable material operatively disposed in the areas defined by said cross-over points. Finally, the method includes the further step of programming the layer of discrete portions of phase changeable material by converting at least selected ones of the discrete portions of said layer to the other one of said states to form selected substantially non-conductive, discrete portions of a phase changeable material of said layer and selected comparatively highly conductive, portions of a phase changeable material of said layer.


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