The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 1989
Filed:
Dec. 01, 1987
Fletcher Jones, Ossining, NY (US);
Joseph S Logan, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A high rate, low contamination, non-reactive sputter etching or deposition apparatus is disclosed herein. The apparatus is comprised of a pair of parallel plate electrodes, cathode and substrate and an additional or wall electrode means surrounding said other electrode means. The wall electrode can be made to be coplanar with said other electrodes and the area of said electrodes are designed so that the wall electrode is resputtered eliminating contamination. The electrodes are housed in a vacuum chamber with inlet means for introducing a non-reactive gas into said chamber. Means are provided for supplying said RF voltage to said electrodes both in and out of phase and for varying the magnitude of the substrate electrode RF voltage with respect to the magnitude of the cathode voltage. Thick insulator rings are used to reduce stray capacitance between the wall electrode and ground whereby the outer chamber (normally grounded) forms a low inductance path between the cathode electrode and acts as a shield for the inner chamber RF potential.