The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 1989
Filed:
May. 09, 1986
Applicant:
Inventors:
Youichi Ohnishi, Higashiosaka, JP;
Akira Okuda, Sakai, JP;
Hiromi Shima, Hirakata, JP;
Shinichi Mizuguchi, Katano, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
315176 ; 31511121 ; 31511131 ; 315115 ; 315108 ; 315175 ; 427 38 ; 204298 ;
Abstract
A plasma processing apparatus wherein a means is provided to apply the proper negative DC voltage through a filter circuit to an electrode for generating the low-temperature plasma through the feed of the high-frequency power. When the high-frequency power has been fed in the higher high-frequency power density to the electrode for generating the low temperature plasma, the sparks (abnormal discharge) easy to be generated are prevented from being caused to generate the stable low-temperature plasma for better plasma processing.