The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 1989
Filed:
Dec. 05, 1986
Howard L Tigelaar, Allen, TX (US);
James L Paterson, Richardson, TX (US);
Roger A Haken, Dallas, TX (US);
Thomas C Holloway, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An integrated circuit including doubled capacitors (metal/dielectric/TiN/dielectric/polysilicon). This structure is preferably made using a patterned interlevel oxide/nitride layer to split a polycide layer, i.e. at some locations the polycide layer has low sheet resistance and at other locations the polycide layer is vertically split to provide two layers (TiN and unsilicided polysilicon), which are separated by the interlevel oxide/nitride. A double contact etch is used before the first metal interconnect layer is deposited, so that the metal makes ohmic contact to underlying silicide or silicon or TiN in some locations, and in others provides insulated metal top plates over TiN/polysilicon capacitance to provide doubled capacitors.