The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 1989
Filed:
Dec. 19, 1986
Applicant:
Inventors:
Hideto Furuyama, Oota, JP;
Atsushi Kurobe, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kanagawa, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437129 ; 437130 ; 437156 ;
Abstract
In an embedded type semiconductor laser, at least three layers of a first conduction type clad layer, a quantum well active layer which contains a first or second conduction type or a pn junction, and a second conduction type clad layer, are grown successively on a first conduction type substrate. A high concentration impurity doped layer is provided excluding a predetermined striped region, situated adjacent to the active layer. An impurity diffusion is carried out by heat treatment which diffuses dopant from the high concentration impurity doped layer to the active layer.