The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 1989
Filed:
Aug. 10, 1987
Yasuo Ohba, Yokohama, JP;
Miyoko Watanabe, Halifax, CA;
Hideto Sugawara, Tokyo, JP;
Masayuki Ishikawa, Tokyo, JP;
Yukio Watanabe, Yokohama, JP;
Motoyuki Yamamoto, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
Disclosed herein is a double-heterostructure semiconductor laser which emits a laser beam in a visible light range at ambient temperature. An active layer serving as a light emission layer is sandwiched between first and second cladding layers. The first cladding layer comprises an n type InAlP, while the second cladding layer comprises a p type InAlP and has a mesa stripe shape having slanted side surfaces so as to define a light waveguide channel of the semiconductor laser. Current-blocking layers are formed to cover the slanted side surfaces of the second cladding layer. The current-blocking layers comprise GaAs which is a III-V group compound semiconductor different from the III-V group compound semiconductor (i.e., InAlP) comprised in the second cladding layer. The composition ratio of aluminum in the second cladding layer is set not to be less than 0.4, whereby a Shottky barrier serving to inhibit or suppress a current leak in the light waveguide channel of the semiconductor laser is formed between the second cladding layer and the current-blocking layers.