The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 1989
Filed:
May. 07, 1986
Yasushiro Nishioka, Hachioji, JP;
Takeo Shiba, Kodaira, JP;
Hiroshi Shinriki, Tokyo, JP;
Kiichiro Mukai, Hachioji, JP;
Akihisa Uchida, Tachikawa, JP;
Ichiro Mitamura, Ome, JP;
Keiichi Higeta, Ome, JP;
Katsumi Ogiue, Tokyo, JP;
Kunihiko Yamaguchi, Sayama, JP;
Noriyuki Sakuma, Hachioji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor memory device is provided such as the type having flip-flop memory cells each including two bipolar transistors in cross connection with each other. In certain embodiments, at least a part of a Schottky barrier diode or capacitor in the memory cell is formed under a digit line. This memory device is greatly reduced in its required area, and the Schottky barrier diode and capacitor are negligibly influenced by the digit line. In other embodiments, it is arranged to provide different electrodes for the Schottky barrier diode and the capacitor to optimize construction in a minimized space.