The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 1989
Filed:
Nov. 19, 1987
Applicant:
Inventors:
Susan B Felch, Los Altos, CA (US);
Ronald A Powell, Redwood City, CA (US);
Assignee:
Varian Associates, Inc., Palo Alto, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
G01J / ;
U.S. Cl.
CPC ...
356326 ; 356328 ;
Abstract
A method of mapping implanted ion dose uniformity is disclosed in which wafers of polysilicon-on-silicon or polysilicon-on-oxidized-silicon are implanted with the ion dose to be mapped and then scanned in a spectrophotmeter using monochromatic radiation. An interference spectral technique is used to achieve improved sensitivity while preserving thermal and electrical properties close to those of actual devices.