Imaging charge-coupled device having an all parallel output

Abstract

A charge-coupled device comprises a substrate of semiconductor material having at least two buried channels formed therein. At least two sets of clock electrodes overlie the buried channels. By application of appropriate potentials to the clock electrodes, an electrical charge may be propagated in controlled fashion along each buried channel towards its output end. A floating diffusion is formed at the output end of each buried channel for receiving charge propagated along the channel. Output transistors are assoicated with the buried channels respectively and each has a control electrode connected to the floating diffusion of the associated channel. An output diffusion is located between the floating diffusions and the control electrodes of the transistors and extends perpendicular to the channels. A reset gate is associated with each channel and lies over the substrate between the floating diffusion of the associated channel and the output diffusion, so that by application of a predetermined potential to the reset gate a conductive channel is formed in the substrate between the floating diffusion of the associated channel and the output diffusion. A reset bus extends over the substrate on the opposite side of the floating diffusions from the reset gate and has a bus extension which extends over the substrate between the floating diffusions and is connected to the reset gates.