The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 1989

Filed:

Sep. 21, 1987
Applicant:
Inventors:

Kaneo Watanabe, Kyoto, JP;

Masayuki Iwamoto, Hyogo, JP;

Koji Minami, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
136258 ; 357 30 ; 357 59 ;
Abstract

A photovoltaic device comprises a semiconductor layer of hydrogenated amorphous silicon for photoelectric conversion, in which the proportion of silicon atoms bonded to two hydrogen atoms to all the silicon atoms is not more than 1%.


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