The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 1989

Filed:

Oct. 19, 1987
Applicant:
Inventors:

Yoshinao Kawasaki, Yamaguchi, JP;

Hironobu Kawahara, Kudamatsu, JP;

Yutaka Kakehi, Hikari, JP;

Kado Hirobe, Koganei, JP;

Katsuyoshi Kudo, Kudamatsu, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; B05D / ; C23C / ;
U.S. Cl.
CPC ...
156643 ; 118 501 ; 118623 ; 118728 ; 156345 ; 156646 ; 156657 ; 156662 ; 20419225 ; 20419237 ; 204298 ; 252 791 ; 427 38 ;
Abstract

This invention relates to a plasma treating method and apparatus therefor. The plasma treating method comprises rendering a gas having a critical potential plasmic under a reduced pressure and changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. The plasma treating apparatus comprises means for rendering a gas having a critical potential plasmic under a reduced pressure and means for changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. According to the present invention, the etching step and the film formation step can be carried out alternately and the plasma treating time can be shortened.


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