The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 1988
Filed:
Oct. 27, 1987
Applicant:
Inventors:
Frank S Becker, Munich, DE;
Dieter Pawlik, Groebenzell, DE;
Assignee:
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ; B05D / ; C03C / ;
U.S. Cl.
CPC ...
4272553 ; 437236 ; 437240 ; 501 54 ;
Abstract
A method for the manufacture of silicon layers containing boron and phosphorus dopants wherein the silicon wafers are positioned in a reaction chamber into which there is introduced, from separate sources, (a) tetraethylorthosilicate as a source of silicon dioxide, (b) trimethylborate as a source of boron, and (c) a phosphorus source. The three reactants are decomposed in the reaction chamber to deposit silicon dioxide doped with boron and phosphorus onto the wafers, the decomposition being carried out at a temperature of at least 600.degree. C. and at a substantially subatmospheric pressure.