The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 1988
Filed:
Feb. 10, 1987
Jeffrey E Brighton, Katy, TX (US);
Deems R Hollingsworth, Missouri City, TX (US);
Michael Welch, Sugar Land, TX (US);
Ronald E McMann, Rosenberg, TX (US);
Manuel L Torreno, Jr, Houston, TX (US);
Charles W Sullivan, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of forming double polysilicon contacts to underlying diffused regions of a semiconductor body which includes forming first and second level electrically conductive silicon layers over the body which contact respective first and second diffused regions of the body. The diffused regions are formed such that said first diffused region is ringed by said second diffused region. The second silicon layer thus overlaps the first silicon layer. The top surfaces of the first and second silicon layers are silicided such that the silicide formed over the first silicon layer is aligned with the edge of the second silicon layer.