For the Inventor, By the Inventor

Enter inventor name

Missouri City, TX, United States of America

Deems R Hollingsworth

USPTO Granted Patents = 7

Average Co-Inventor Count = 2.3

ph-index = 5

Forward Citations = 172(Granted Patents)

Location History:

Missouri City, TX (US) (1988 - 1992)
Plano, TX (US) (2004 - 2006)

Company Filing History:

7 out of 29,232

Texas Instruments Corporation

Years Active: 1988-2006

Loading Chart...

7 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7148558 - Versatile system for limiting mobile charge ingress in SOI semiconductor structures (2006-12-12),

2. 6803295 - Versatile system for limiting mobile charge ingress in SOI semiconductor structures (2004-10-12),

3. 5104816 - Polysilicon self-aligned bipolar device including trench isolation and (1992-04-14),

4. 4868631 - Bipolar transistor with shallow junctions and capable of high packing (1989-09-19),

5. 4799099 - Bipolar transistor in isolation well with angled corners (1989-01-17),

6. 4789885 - Self-aligned silicide in a polysilicon self-aligned bipolar transistor (1988-12-06),

7. 4748490 - Deep polysilicon emitter antifuse memory cell (1988-05-31),

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…