The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 1988
Filed:
Sep. 11, 1985
Masaaki Aoki, Minato, JP;
Toshiaki Masuhara, Nishitama, JP;
Terunori Warabisako, Nishitama, JP;
Shoji Hanamura, Kokubunji, JP;
Yoshio Sakai, Tsukui, JP;
Seiichi Isomae, Sayama, JP;
Satoshi Meguro, Nishitama, JP;
Shuji Ikeda, Koganei, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A CMOS IC is formed on a semiconductor crystalline surface having a plane azimuth (110) or (023), or of a plane azimuth close thereto (plane azimuth substantially in parallel with the above-mentioned planes), in order to increase the speed of operation. At low temperatures, dependency of the carrier mobility upon the plane azimuth becomes more conspicuous as shown in FIG. 1, and the difference of mobility is amplified depending upon the planes. Therefore, employment of the above-mentioned crystalline planes helps produce a great effect when the CMOS device is to be operated at low temperature (e.g., 100.degree. K. or lower), and helps operate the device at high speeds.