The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 1988

Filed:

Dec. 06, 1985
Applicant:
Inventors:

Noritada Sato, Yokosuka, JP;

Yasukazu Seki, Yokosuka, JP;

Assignee:

Fuji Electric Co., Ltd., Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 24 ; 437 87 ; 437967 ; 427 39 ; 136258 ;
Abstract

Crystalline silicon films are formed by exposing a film of amorphous silicon on a substrate to a glow discharge in the presence of an inert gas such as argon. Masks can be used to allow for selective crystallization of defined regions of the amorphous film.


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