The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 1988
Filed:
Oct. 23, 1987
Applicant:
Inventors:
Klaus D Beyer, Poughkeepsie, NY (US);
Louis L Hsu, Fishkill, NY (US);
Dominic J Schepis, Wappingers Falls, NY (US);
Victor J Silvestri, Hopewell Junction, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NE (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 90 ; 437 67 ; 437103 ; 437239 ; 148D / ; 148D / ; 148D / ; 156610 ; 156613 ; 156612 ; 156644 ;
Abstract
A method for forming epitaxial grown silicon structure having substantially defect free outer surfaces and resulting structure is provided. A silicon substrate is provided, on which an epitaxial silicon crystal is grown. The outer surface layer of the silicon epitaxially grown silicon crystal will contain defective material which is removed by oxidation of the outer layer to silicon dioxide. This removes the defect containing outer layer, creating a new outer layer which is substantially defect free.