The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 1988
Filed:
Nov. 12, 1986
Applicant:
Inventors:
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01C / ; H01L / ;
U.S. Cl.
CPC ...
437 47 ; 437 60 ; 437193 ; 437200 ; 437190 ; 437241 ; 437918 ; 148D / ; 148D / ; 357 51 ;
Abstract
An improved resistor for use in MOS integrated circuits. An opening is formed in an insulative layer which separates two conductive regions. A plasma enhanced chemical vapor deposition of passivation material such as silicon-rich silcon nitride is deposited in the window, contacting both conductive regions and providing resistance in a vertical direction between these regions. A subsequent annealing process involving controlled temperatures and cycle times provides for determining desired resistive values from an equivalent deposition process. Further, a barrier metal layer may be formed between the vertical resistor and the second conductive region.