The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 1988
Filed:
May. 14, 1986
Fusaji Shoji, Yokohama, JP;
Haruhiko Matsuyama, Hiratsuka, JP;
Akio Fujiwara, Fujisawa, JP;
Fumio Kataoka, Yokohama, JP;
Teruji Aizawa, Shimodate, JP;
Hitachi. Ltd., Tokyo, JP;
Hitchi Chemical Co., Tokyo, JP;
Abstract
An organic silicon-terminated polyimide precursor having a very stable solution viscosity is produced by polycondensing 100 parts by weight of a mixture composed of 90 to 99.5% by mole of an organic diamine represented by the following general formula (I) and 10 to 0.5% by weight by mole of an organic silyl represented by the following general formula (II): ##STR1## wherein R.sup.1 and R.sup.2 are divalent organic groups; R.sup.3 and R.sup.4 are monovalent organic groups; m is 0, 1, 2, or 3, with an organic tetracarboxylic acid dianhydride represented by the following general formula (III) in a molar amount corresponding to the 100 parts by weight of the mixture of the organic diamine and the organic silyl represented by the said general formulae (I) and (II), respectively, in an organic polar solvent at 0.degree. to 40.degree. C., thereby obtaining a solution of organic silicon-terminated polyimide precursor, and heating the solution at 50.degree. to 80.degree. C.: ##STR2## wherein R.sup.5 is a tetravelent organic group. The polyimide having good adhesion and mechanical characteristics is obtained by further heating the precursor solution at 100.degree. to 450.degree. C.