The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 1988
Filed:
Mar. 21, 1986
Applicant:
Inventor:
Theodore G Hollinger, Bend, OR (US);
Assignee:
Advanced Power Technology, Bend, OR (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03C / ;
U.S. Cl.
CPC ...
430314 ; 430317 ; 430945 ; 148187 ; 437 28 ; 437 29 ; 437 36 ; 437 41 ; 437147 ; 437150 ; 437157 ; 437229 ; 437907 ; 437913 ; 437931 ; 437984 ;
Abstract
A mask-defect-immune process for making MOS semiconductor devices. The process features the creation of a surrogate mask in semiconductor wafer material per se, thus to eliminate the requirement that plural masks be used, and that plural mask alignments be performed. In all ways of practicing the invention, a surrogate mask is created in a dopant protective region.