The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 1988
Filed:
Apr. 01, 1986
Marc D Hartranft, Scotts Valley, CA (US);
Keith A Garrett, San Jose, CA (US);
Zilog, Inc., Campbell, CA (US);
Abstract
Protection of the thin gate oxide of MOS field effect transistors from irreversible puncture due to undesired high voltages and currents, generated by electrostatic discharge through handling or otherwise, is provided by a two stage circuit that operates to shunt thousands or tens of volts around the protected transistors. A first stage, employing a thick field effect transistor, protects against the very high voltage. A second stage, employing a thin field effect transistor, protects against lower but still excessive voltage. The protection circuit is formed as part of an integrated circuit chip by surrounding the lead bonding pad to which the protected transistors are connected.