The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 1988

Filed:

Apr. 10, 1987
Applicant:
Inventors:

Ronald H Wilson, Niskayuna, NY (US);

Robert W Stoll, Schenectady, NY (US);

Herbert R Philipp, Scotia, NY (US);

Assignee:

General Electric Company, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ; C23C / ;
U.S. Cl.
CPC ...
427250 ; 427 55 ; 427 99 ; 427124 ; 427252 ; 427253 ; 427255 ; 4272551 ;
Abstract

A method and heating apparatus are provided for selectively depositing metal films, such as tungsten, on the metal and semi-conductor surfaces of a silicon wafer by chemical vapor deposition. The method and heating apparatus serve to isolate the depositing surface of silicon wafers from both infrared radiation and the nucleating species which are vaporized by hot surfaces within the reaction chamber by means of a barrier which reflects or absorbs infrared radiation and condenses vaporized nucleating species before a nucleate metal deposition sites on metal or semiconductor surfaces.


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