The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 1988

Filed:

Mar. 24, 1986
Applicant:
Inventors:

Yoshihiro Takemae, Tokyo, JP;

Masao Nakano, Kawasaki, JP;

Kimiaki Sato, Tokyo, JP;

Nobumi Kodama, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365203 ; 365189 ;
Abstract

A semiconductor memory device comprises a memory cell array, a bit line charge-up circuit coupled to one of a plurality of pairs of bit lines from the memory cell array for initially charging up the one pair of bit lines to a first voltage which is lower than a power source voltage used to drive the semiconductor memory device, an active restore circuit coupled to the one pair of bit lines and a switching circuit coupled to the one pair of bit lines for disconnecting the one pair of bit lines into a first pair of bit line sections on the side of the memory cell array and a second pair of bit line sections on the side of the active restore circuit after the one pair of bit lines are initially charged up to the first voltage. The active restore circuit charges up one of the pair of bit line sections on the side of the active restore circuit to a second voltage which is higher than the first voltage depending on a datum read out from the memory cell array.


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