The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 1988
Filed:
Mar. 12, 1986
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 26 ; 357 28 ; 357 60 ;
Abstract
A piezoresistive strain sensing device is comprised of a semiconductor single-crystal substrate, having crystal indices in the (100) phase, and having p-type and n-type diffused resistors formed therein. A diffused resistance gauge is formed of the p-type and n-type resistors. Temperature compensation means are formed adjacent the resistance gauge in the substrate.
Miura, Hideo. (1988). Piezoresistive strain sensing device (U.S. Patent No. 4739381). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4739381
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile